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r09ds0039ej0300 rev.3.00 page 1 of 14 mar 12, 2013 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. data sheet ne5550234 silicon power mos fet features ? high output power : p out = 33.0 dbm typ. (v ds = 7.5 v, i dset = 40 ma, f = 460 mhz, p in = 15 dbm) ? high power added efficiency : add = 68% typ. (v ds = 7.5 v, i dset = 40 ma, f = 460 mhz, p in = 15 dbm) ? high linear gain : g l = 23.5 db typ. (v ds = 7.5 v, i dset = 40 ma, f = 460 mhz, p in = 0 dbm) ? high esd tolerance ? suitable for vhf to uhf-band class-ab power amplifier. applications ? 150 mhz band radio system ? 460 mhz band radio system ? 900 mhz band radio system ordering information part number order number package marking supplying form ne5550234 ne5550234-az v5 ? 12 mm wide embossed taping ? gate pin faces the perforation side of the tape ne5550234-t1 NE5550234-T1-AZ 3-pin power minimold (34 pkg) (pb-free) ? 12 mm wide embossed taping ? gate pin faces the perforation side of the tape ? qty 1 kpcs/reel remark to order evaluation samples, please contact your nearby sales office. part number for sample order: ne5550234 absolute maximum ratings (t a = 25 c, unless otherwise specified) operation in excess of any one of these parameters may result in permanent damage. parameter symbol ratings unit drain to source voltage v ds 30 v gate to source voltage v gs 6.0 v drain current i ds 0.6 a drain current (50% duty pulsed) i ds-pulse 1.2 a total power dissipation note p tot 12.5 w channel temperature t ch 150 c storage temperature t stg ? 65 to +150 c note: value at t c = 25 c caution observe precautions when handling because these devi ces are sensitive to electrostatic discharge. r09ds0039ej0300 rev.3.00 mar 12, 2013
ne5550234 r09ds0039ej0300 rev.3.00 page 2 of 14 mar 12, 2013 recommended operating range (t a = 25 c) parameter symbol test conditions min. typ. max. unit drain to source voltage v ds ? 7.5 9.0 v gate to source voltage v gs 1.65 2.20 2.85 v drain current i ds ? 0.38 ? a input power p in f = 460 mhz, v ds = 7.5 v ? 15 20 dbm electrical characteristics (t a = 25 c, unless otherwise specified) parameter symbol test conditions min. typ. max. unit dc characteristics gate to source leakage current i gss v gs = 6.0 v ? ? 100 na drain to source leakage current (zero gate voltage drain current) i dss v ds = 25 v ? ? 10 a gate threshold voltage v th v ds = 7.5 v, i ds = 1.0 ma 1.15 1.65 2.25 v drain to source breakdown voltage bv dss i ds = 10 a 25 38 ? v transconductance g m v ds = 7.5 v, i ds = 140 20 ma ? 0.44 ? s thermal resistance r th channel to case ? 10.0 ? c/w rf characteristics output power p out f = 460 mhz, v ds = 7.5 v, 31.5 33.0 ? dbm drain current i ds p in = 15 dbm, ? 0.38 ? a power drain efficiency d i dset = 40 ma (rf off) ? 70 ? % power added efficiency add ? 68 ? % linear gain g l note 1 ? 23.5 ? db load vswr tolerance note 2 f = 460 mhz, v ds = 9.0 v, p in = 15 dbm, i dset = 40 ma (rf off) load vswr=20:1(all phase) no destroy output power p out ? 33.0 ? dbm drain current i ds ? 0.36 ? a power drain efficiency d ? 74 ? % power added efficiency add ? 73 ? % linear gain g l note 3 f = 157 mhz, v ds = 7.5 v, p in = 15 dbm, i dset = 40 ma (rf off) ? 25.8 ? db output power p out ? 32.2 ? dbm drain current i ds ? 0.35 ? a power drain efficiency d ? 62 ? % power added efficiency add ? 60 ? % linear gain g l note 4 f = 900 mhz, v ds = 7.5 v, p in = 17 dbm, i dset = 40 ma (rf off) ? 18.3 ? db notes: 1. p in = 0 dbm 2. these characteristics values are measurement usin g measurement tools especially by renesas. 3. p in = ? 5 dbm 4. p in = 7 dbm remark dc performance is 100% testing. rf performanc e is testing several samples per wafer. the wafer rejection criterion for standard de vices is 1 reject for several samples.
ne5550234 r09ds0039ej0300 rev.3.00 page 3 of 14 mar 12, 2013 test circuit schematic for 460 mhz c20 c10 in out c22 c11 c12 c21 c1 v ds c1 l1 r1 v gs ne5550234 50 50 l20 l10 l11 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm31mr71h105ka88l murata c10 27 pf grm1882c1h270ja01 murata c11 3.9 pf grm1882c1h3r9cz01 murata c12 18 pf grm1882c1h180ja01 murata c20 12 pf grm1882c1h120ja01 murata c21 1.5 pf grm1882c1h1r5cz01 murata c22 100 pf grm2162c1h101ja01d murata r1 4.7 k 1/10 w chip resistor ssm ssm_rg1608pb472 l1 47.2 nh 0.4 mm, d = 2 mm, 7 turns ohesangyou l10, l11 12 nh ll1608-fs12nj toko l20 7.8 nh 0.4 mm, d = 1.4 mm, 3 turns ohesangyou pcb ? r1766, t = 0.8 mm, r = 4.8, size = 30 40 mm panasonic sma connecter ? waka 01k0790-20 waka component layout of t est circuit for 460 mhz out v gs v ds c1 c1 in c1 c1 r1 r1 l1 l1 c10 c10 c11 c11 l10 l10 c12 c12 l11 l11 l20 l20 c20 c20 c21 c21 c22 c22
ne5550234 r09ds0039ej0300 rev.3.00 page 4 of 14 mar 12, 2013 typical characteristics 1 (t a = 25 c) rf: f = 460mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p in = ?15 to 20 dbm im: f1 = 460mhz, f2 = 461 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40ma, p out (2 tone) = 6 to 28 dbm 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (2 tone) (dbm) im 3 /im 5 vs. 2 tones output power 2nd harmonics 2f 0 (dbc) 3rd harmonics 3f 0 (dbc) output power p out (dbm) 2f 0 , 3f 0 vs. output power power gain g p (db) power added efficiency add (%) input power p in (dbm) power gain, power added efficiency vs. input power 2f 0 - 3.6 v 2f 0 - 4.5 v 2f 0 - 7.5 v 2f 0 - 9 v 3f 0 - 3.6 v 3f 0 - 4.5 v 3f 0 - 9 v 3f 0 - 7.5v 3f 0 - 6 v 2f 0 - 6 v ? 70 0 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 40 25 20 15 0510 30 im 3 - 3.6 v im 3 - 4.5 v im 3 - 7.5 v im 3 - 9 v im 5 - 3.6 v im 5 - 4.5 v im 5 - 9 v im 5 - 7.5 v im 5 - 6 v im 3 - 6 v ? 70 0 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 30 25 20 15 0510 output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power p out - 3.6 v p out - 4.5 v p out - 7.5 v p out - 9 v p out - 6 v i ds - 7.5 v i ds - 4.5 v i ds - 6 v i ds - 9 v 0 40 35 30 25 20 15 10 5 25 20 10 5 0 ?20 ?10 ?5 15 0.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ?15 add - 3.6 v add - 7.5 v add - 4.5 v add - 6 v add - 9 v g p - 3.6 v g p - 4.5 v g p - 7.5 v g p - 9 v g p - 6 v 0 0 40 80 35 70 30 60 25 50 20 40 15 30 10 20 510 25 20 10 5 0 ?20 ?10 ?5 15 ?15 35 i ds - 3.6 v remark the graphs indicate nominal characteristics.
ne5550234 r09ds0039ej0300 rev.3.00 page 5 of 14 mar 12, 2013 test circuit schematic for 157 mhz c20 c10 in out c22 c11 c21 c2 v ds c1 l1 r1 v gs ne5550234 50 50 l11 l10 r10 components of test circuit for measuring electrical characteristics symbol value type maker c10 27 pf gqm1882c1h270jb01 murata c11 6.8 pf gqm1882c1h6r8db01 murata c20 8.2 pf gqm1882c1h8r2db01 murata c21 27 pf gqm1882c1h270jb01 murata c22 100 pf gqm1882c1h101jb01 murata c1 1 f grm21bb31h105ka2l murata c2 1 f grm21bb31h105ka2l murata l10 100 nh ll1608-fslr10j toko l11 47 nh d20-47n2 ohesangyou l1 74 nh d20-74n7 ohesangyou r10 5.6 mcr03j5r6 rohm r1 4.7 k mcr03j472 rohm pcb ? r1766, t = 0.8 mm, r = 4.8, size = 30 40 mm panasonic sma connecter ? waka 01k0790-20 waka
ne5550234 r09ds0039ej0300 rev.3.00 page 6 of 14 mar 12, 2013 component layout of test circuit for 157 mhz c10 c11 c20 c21 c22 c1 r10 l1 c2 l10 rf in rf out v gs v ds l11 r1
ne5550234 r09ds0039ej0300 rev.3.00 page 7 of 14 mar 12, 2013 typical characteristics 2 (t a = 25 c) rf: f = 157 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p in = ?10 to 20 dbm add - 3.6 v add - 6 v add - 4.5 v add - 9 v add - 7.5 v p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power 0 0.0 40 0.8 35 0.7 30 0.6 25 0.5 20 0.4 15 0.3 10 0.2 5 0.1 25 10 5 0 ?1 5 ?10 ?5 15 power gain g p (db) power added efficiency add (%) input power p in (dbm) power gain, power added efficiency vs. input power g p - 3.6 v g p - 4.5 v g p - 6 v g p - 7.5 v g p - 9 v 00 40 80 35 70 30 60 25 50 20 40 15 30 10 20 510 i ds - 3.6 v i ds - 6 v i ds - 4.5 v i ds - 9 v i ds - 7.5 v 20 25 10 5 0 ?1 5 ?10 ?5 15 20 remark the graphs indicate nominal characteristics.
ne5550234 r09ds0039ej0300 rev.3.00 page 8 of 14 mar 12, 2013 test circuit schematic for 900 mhz c10 in out c22 c21 c20 c2 v ds c1 l1 r1 v gs ne5550234 50 50 l11 l10 components of test circuit for measuring electrical characteristics symbol value type maker c10 10 pf gqm1882c1h100jb01 murata c20 6.8 pf gqm1882c1h6r8db01 murata c21 1 pf gqm1884c2a1r0cb01 murata c22 100 pf gqm1882c1h101jb01 murata c1 1 f grm21bb31h105ka2l murata c2 1 f grm21bb31h105ka2l murata l10 2.7 nh ll1608-fsl2n7s toko l1 74 nh d20-74n7 ohesangyou r1 4.7 k mcr03j472 rohm pcb ? r1766, t = 0.8 mm, r = 4.8, size = 30 40 mm panasonic sma connecter ? waka 01k0790-20 waka
ne5550234 r09ds0039ej0300 rev.3.00 page 9 of 14 mar 12, 2013 component layout of test circuit for 900 mhz c10 c20 c21 c22 c1 r1 l1 c2 l10 rf in rf out v gs v ds
ne5550234 r09ds0039ej0300 rev.3.00 page 10 of 14 mar 12, 2013 typical characteristics 3 (t a = 25 c) rf: f = 900 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p in = ?10 to 20 dbm input power p in (dbm) power gain, drain current vs. input power 0 35 30 25 20 15 10 5 0 35 30 25 20 15 10 5 0 100 80 60 40 20 25 20 10 5 0 ?1 5 ?10 ?5 15 25 20 10 5 0 ?1 5 ?10 ?5 15 power gain g p (db) power added efficiency add (%) input power p in (dbm) output power, power added efficiency vs. input power output power p out (dbm) drain current i ds (a) 140 120 0 0.5 0.4 0.3 0.2 0.1 0 100 80 60 40 20 0 100 80 60 40 20 0.7 0.6 add - 6.0 v add - 4.5 v add - 7.5 v add - 9 v add - 3.6 v g p - 3.6 v g p - 4.5 v g p - 6 v g p - 7.5 v g p - 9 v i ds - 3.6 v i ds - 6.0 v i ds - 4.5 v i ds - 9 v i ds - 7.5 v p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v remark the graphs indicate nominal characteristics.
ne5550234 r09ds0039ej0300 rev.3.00 page 11 of 14 mar 12, 2013 s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/
ne5550234 r09ds0039ej0300 rev.3.00 page 12 of 14 mar 12, 2013 mounting pad layout dimensions 3-pin power minimold (34 pkg) (unit: mm) 2.2 1.0 2.0 2.0 1.0 1.0 1.4 0.4 0.9 2.8 45 45 remark the mounting pad layout in this document is for reference only. when designing pcb, please consider workability of moun ting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design.
ne5550234 r09ds0039ej0300 rev.3.00 page 13 of 14 mar 12, 2013 package dimensions 3-pin power minimold (34 pkg) (unit: mm) (bottom view) (side view) pin connections 1. drain 2. source 3. gate 1.50.1 0.41 +0.03 ?0.06 4.50.1 0.420.06 0.420.06 1.60.2 3.0 1.5 2 13 2.50.1 4.00.25 0.8 min. 0.470.06
ne5550234 r09ds0039ej0300 rev.3.00 page 14 of 14 mar 12, 2013 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (pack age surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ws260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating).
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne5550234 data sheet description rev. date page summary 1.00 apr 25, 2012 ? first edition issued 2.00 jul 04, 2012 p.2 modification of electrical characteristics 3.00 mar 12, 2013 p3 modification of components of test circuit for measuring electrical characteristics p5 modification of test circuit schematic for 157 mhz p8 modification of components of test circuit for measuring electrical characteristics
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